Three band-gap QW intermixing in InP/InGaAs/InGaAsP system for monolithically integrated optical switch

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 2, Issue , 1998, Pages 194-195

  Qian, Y H ^a   Owen, M ^a   Ke, M L ^a   Qiu, B C ^a   McDougall, S D ^a   Kowalski, O P ^a   Hamilton, C J ^a   Bryce, A C ^a   Marsh, J H ^a   Wilkinson, C D W ^a   Penty, R V ^a   White, I H ^a   Perrin, S ^a   Rogers, D ^a   Robertson, M ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; ENERGY GAP; INTEGRATED OPTOELECTRONICS; LIGHT MODULATORS; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SILICA; SPUTTER DEPOSITION;

QUANTUM WELL INTERMIXING;

OPTICAL SWITCHES;

EID: 0032304339     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)