Quantitative model for the kinetics of compositional intermixing in GaAs-AlGaAs quantum-confined heterostructures

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 4, Issue 4, 1998, Pages 653-660

  Helmy, Amr Saher ^a,b,c   Aitchison, J Stewart ^a,b,d,e,f   Marsh, John H ^a,b  

^a IEEE   (United States)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

^c CAIRO UNIVERSITY   (Egypt)

^d HERIOT WATT UNIVERSITY   (United Kingdom)

^e TELCORDIA TECHNOLOGIES   (United States)

^f The Royal College of Physicians of Edinburgh   (United Kingdom)

Author keywords

Diffusion processes; Quantum heterostructures; Quantum wells; Quantum well interdiffusion

Indexed keywords

CRYSTAL DEFECTS; ENERGY GAP; INTERDIFFUSION (SOLIDS); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR QUANTUM WELLS; SILICA;

ALUMINUM GALLIUM ARSENIDE; QUANTITATIVE ATOMIC-SCALE MODEL;

HETEROJUNCTIONS;

EID: 0032117548     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.720476     Document Type: Article

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