Electric field directed assembly of an InGaAs LED onto silicon circuitry

IEEE Photonics Technology Letters

Volumn 12, Issue 9, 2000, Pages 1198-1200

  Edman, C F ^a   Swint, R B ^b   Gurtner, C ^a   Formosa, R E ^a   Roh, S D ^b   Lee, K E ^b   Swanson, P D ^a   Ackley, D E ^a   Coleman, J J ^b   Heller, M J ^a  

^a Nanogen Inc USA   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRIC CONTACTS; ELECTRODES; ELECTROPHORESIS; FLIP CHIP DEVICES; LIGHT EMITTING DIODES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; SUBSTRATES;

ELECTRIC FIELD DIRECTED ASSEMBLY; ELECTROPHORETIC CURRENTS;

INTEGRATED OPTOELECTRONICS;

EID: 0034264640     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.874234     Document Type: Article

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