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Volumn 11, Issue 1, 1999, Pages 57-59

Epitaxial liftoff microcavities for 1.55-μm quantum-well spatial light modulators

Author keywords

Fast optical switching; Microcavities

Indexed keywords

EPITAXIAL GROWTH; FOUR WAVE MIXING; OPTICAL PROPERTIES; SEMICONDUCTOR QUANTUM WELLS;

EID: 0032760783     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.736389     Document Type: Article
Times cited : (5)

References (5)
  • 1
    • 0042605878 scopus 로고    scopus 로고
    • Fe-doped InGaAs/InGaAsP photorefractive multiple quantum well devices operating at 1.55 μm
    • June
    • C. De Matos, A. Le Corre, H. L'Haridon, S. Gosselin, and B. Lambert, "Fe-doped InGaAs/InGaAsP photorefractive multiple quantum well devices operating at 1.55 μm," Appl. Phys. Lett., vol. 70, no. 26, pp. 3591-3593, June 1997.
    • (1997) Appl. Phys. Lett. , vol.70 , Issue.26 , pp. 3591-3593
    • De Matos, C.1    Le Corre, A.2    L'Haridon, H.3    Gosselin, S.4    Lambert, B.5
  • 2
    • 0029291981 scopus 로고
    • Diffraction from a short-cavity Fabry-Pérot: Application to photorefractive quantum wells
    • D. D. Nolte and K. M. Kwolek, "Diffraction from a short-cavity Fabry-Pérot: Application to photorefractive quantum wells," Opt. Commun., vol. 115, pp. 606-616, 1995.
    • (1995) Opt. Commun. , vol.115 , pp. 606-616
    • Nolte, D.D.1    Kwolek, K.M.2
  • 3
    • 0025388551 scopus 로고
    • Epitaxial lift-off GaAs LED's to Si for fabrication of optoelectronic inegrated circuits
    • Jan.
    • I. Pollentier, P. Demeester, A. Ackaert, L. Buydens, P. Van Daele, and R. Baets, "Epitaxial lift-off GaAs LED's to Si for fabrication of optoelectronic inegrated circuits," Electron. Lett., vol. 26, no. 3, pp. 193-194, Jan. 1990.
    • (1990) Electron. Lett. , vol.26 , Issue.3 , pp. 193-194
    • Pollentier, I.1    Demeester, P.2    Ackaert, A.3    Buydens, L.4    Van Daele, P.5    Baets, R.6
  • 4
    • 0030290140 scopus 로고    scopus 로고
    • Room temperature photo-pumped operation of 1.58 μm vertical-cavity lasers fabricated on Si substrates using wafer bonding
    • Nov.
    • H. Wada, T. Takamori, and T. Kamijoh, "Room temperature photo-pumped operation of 1.58 μm vertical-cavity lasers fabricated on Si substrates using wafer bonding," IEEE Photon. Technol. Lett., vol. 8, pp. 1426-1428, Nov. 1996.
    • (1996) IEEE Photon. Technol. Lett. , vol.8 , pp. 1426-1428
    • Wada, H.1    Takamori, T.2    Kamijoh, T.3
  • 5
    • 0030736344 scopus 로고    scopus 로고
    • 1.3 μm vertical-cavity surface-emitting lasers with double-bonded GaAs-AlAs Bragg mirrors
    • Jan.
    • Y. Qian, Z. H. Zhu, Y. H. Lo, H. Q. Hou, M. C. Wang, and W. Lin, "1.3 μm vertical-cavity surface-emitting lasers with double-bonded GaAs-AlAs Bragg mirrors," IEEE Photon. Technol. Lett., vol. 9, pp. 8-10, Jan. 1997.
    • (1997) IEEE Photon. Technol. Lett. , vol.9 , pp. 8-10
    • Qian, Y.1    Zhu, Z.H.2    Lo, Y.H.3    Hou, H.Q.4    Wang, M.C.5    Lin, W.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.