Photoresist-free fabrication process for a-Si:H thin film transistors

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 2, 1998, Pages 1217-1220

  Gleskova, H ^a   Wagner, S ^a   Shen, D S ^b  

^a Princeton University   (United States)

^b UNIVERSITY OF ALABAMA IN HUNTSVILLE   (United States)

Author keywords

Electron mobility; Photoresist free; Thin film transistors; Threshold voltage; Xerographic toner

Indexed keywords

AMORPHOUS SILICON; ELECTRIC CURRENTS; ELECTRONS; MASKS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

ELECTRON MOBILITY; XEROGRAPHIC TONERS;

THIN FILM TRANSISTORS;

EID: 0032065118     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00308-1     Document Type: Article

References (3)

1. Y. Mikami et al., IEEE Trans. Electron Devices 41 (1994) 306.
2. H. Gleskova, S. Wagner, D.S. Shen, IEEE Electron Device Lett. 16 (1995) 418.
3. H. Gleskova, S. Wagner, D.S. Shen, Mater. Res. Soc. Symp. Proc. 467 (1997) to be published.