Highly reliable GaInAs-GaInP 0.98-μm window laser

IEEE Journal of Quantum Electronics

Volumn 36, Issue 8, 2000, Pages 971-977

  Hashimoto, Jun Ichi ^a   Ikoma, Nobuyuki ^a   Murata, Michio ^a   Katsuyama, Tsukuru ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTATION; LASER WINDOWS; LIGHT ABSORPTION; RAPID THERMAL ANNEALING; RELIABILITY; SCANNING ELECTRON MICROSCOPY;

CATASTROPHIC OPTICAL DAMAGE; WINDOW LASER;

SEMICONDUCTOR LASERS;

EID: 0034250782     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.853558     Document Type: Article

References (24)

1. M. Ohkubo, T. Ijichi, A. Iketani, and T. Kikuta, "980-nm aluminum-free InGaAs/InGaAsP/InGaP GRIN-SCH SL-QW lasers," IEEE J. Quantum Electron., vol. 30, pp. 408-414, 1994.
2. M. Sagawa, T. Toyonaka, K. Hiramoto, K. Shinoda, and K. Uomi, "High-power highly-reliable operation of 0.98-μm InGaAs-InGaP strain-compensated single-quantum-well lasers with tensile-strained InGaAsP barriers," IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 189-195, 1995.
3. H. Asonen, A. Ovtchinnikov, G. Zhang, J. Nappi, P. Savolainen, and M. Pessa, "Aluminum-free 980-nm GaInAs/GaInAsP/GaInP pump lasers," IEEE J. Quantum Electron., vol. 30, pp. 415-423, 1994.
4. L. J. Mawst, H. Yang, M. Nesnidal, A. Al-Muhanna, and D. Botez, "High-power, single-mode, simplified antiresonant reflecting optical waveguide (S-ARROW) distributed feedback semiconductor lasers," in 16th IEEE Int. Semiconductor Laser Conf., Nara, Japan, 1998, pp. 45-46.
5. D. Z. Garbuzov, N. Y. Antonishkis, A. D. Bondarev, A. B. Gulakov, S. N. Zhigulin, N. I. Katsavets, A. V. Kochergin, and E. V. Rafailov, "High-power 0.8 μm InGaAsP-GaAs SCH SQW lasers," IEEE J. Quantum Electron., vol. 27, pp. 1531-1536, 1991.
6. T. Ijichi, M. Ohkubo, N. Matsumoto, and H. Okamoto, "High power CW operation of aluminum-free InGaAs/GaAs/InGaP strained layer single quantum well ridge waveguide lasers," in 12th IEEE Int. Semiconductor Laser Conf., Davos, Switzerland, 1990, pp. 44-45.
7. A. Moser, A. Oosenbrug, E.-E. Latta, T. Forster, and M. Gasser, "High-power operation of strained InGaAs/AlGaAs single quantum well lasers," Appl. Phys. Lett., vol. 59, pp. 2642-2644, 1991.
8. A. Moser, E.-E. Latta, and D. J. Webb, "Thermodynamics approach to catastrophic optical mirror damage of AlGaAs single quantum well lasers," Appl. Phys. Lett., vol. 55, pp. 1152-1154, 1989.
9. A. Moser, "Thermodynamics of facet damage in cleaved AlGaAs lasers," Appl. Phys. Lett., vol. 59, pp. 522-524, 1991.
10. F. R. Gfeller and D. J. Webb, "Degradation and lifetime studies of high-power single-quantum-well AlGaAs ridge lasers," J. Appl. Phys., vol. 68, pp. 14-20, 1990.
11. M. Fukuda, M. Okayasu, J. Temmyo, and J. Nakano, "Degradation behavior of 0.98-μm strained quantum well InGaAs/AlGaAs lasers under high-power operation," IEEE J. Quantum Electron., vol. 30, pp. 471-476, 1994.
12. J. Hashimoto, I. Yoshida, M. Murata, and T. Katsuyama, "Aging time dependence of catastrophic optical damage (COD) failure of a 0.98-μm GaInAs-GaInP strained quantum well laser," IEEE J. Quantum Electron., vol. 33, pp. 66-70, 1997.
13. K. Sato and H. Ikoma, "Internal photoemiission and X-ray photoelectron spectroscopic studies of sulfur-passivated GaAs," Jpn. J. Appl. Phys., vol. 32, pp. 921-929, 1993.
14. cursive Greek chi-passivation," Jpn. J. Appl. Phys., vol. 32, pp. 3354-3362, 1993.
15. H. Meier, "Recent developments of 980-nm pump lasers for optical fiber amplifiers," in ECOC'94, Florence, Italy, 1994, pp. 947-954.
16. H. P. Meier, C. Harder, and A. Oosenbrug, "A belief has changed: Highly reliable 980-nm pump lasers for EDFA applications," in OFC'96. San Jose, CA, 1996, paper ThG2, p. 229.
17. H. Horie, H. Ohta, and T. Fujimori, "Reliability improvement of 980 nm laser diodes with a new facet passivation process," in 16th IEEE Int. Semiconductor Laser Conf., Nara, Japan, 1998, pp. 133-134.
18. N. Lichtenstein, R. Winterhoff, F. Scholz, and H. Schweizer, "The impact of LOC-structures on 670 nm (Al) GaInP highpower lasers," in 16th IEEE Int. Semiconductor Laser Conf., Nara, Japan, 1998, pp. 51-52.
19. N. Ikoma, J. Hashimoto, M. Murata, T. Katsuyama, and I. Yoshida, "High reliability of GaInP/GaInAs 980-nm window laser," in CLEO'98, San Francisco, CA, 1998, paper CMD4, pp. 12-13.
20. J. Hashimoto, N. Ikoma, M. Murata, and T. Katsuyama, "Highly reliable GaInAs/GaInP 0.98 μm window laser," in 16th IEEE Int. Semiconductor Laser Conf., Nara, Japan, 1998, pp. 131-132.
21. M. Watanabe, K. Tani, K. Sasaki, H. Nakatsu, M. Hosoda, S. Matsui, O. Yamamoto, and S. Yamamoto, "295 mW CW maximum output of AlGaInP laser diode with windows grown on facets," in 14th IEEE Int. Semiconductor Laser Conf., Hawaii, 1994, pp. 251-252.
22. M. Sagawa, K. Hiramoto, T. Kikawa, and S. Tsuji, "Highly reliable operation of high-power 0.98-μm InGaAs/InGaAsP lasers with a window structure fabricated by Si implantation," in 16th IEEE Int. Semiconductor Laser Conf., Nara, Japan, 1998, pp. 19-20.
23. M. Watanabe, Y. Ito, H. Shiozawa, M. Okada, O. Horiuchi, A. Tanaka, K. Gen-ei, N. Shimada, H. Okuda, and K. Fukuoka, "InGaAlP Zn-diffused window structure laser diodes fabricated by using highly Zn-doped GaAs layers," in 16th IEEE Int. Semiconductor Laser Conf., Nara, Japan, 1998, pp. 147-148.
24. K. Kawasaki, Y. Nagai, A. Shima, S. Yamamura, M. Miyashita, Y. Kajikawa, and K. Nagahama, "0.98 μm ridge-waveguide LD's with window structure fabricated by quantum well disordering" (in Japanese). Extended Abstracts, Proc. 44th Sprint Meet., Japan Soc. Appl. Phys. Related Soc., no. 3, p. 1057, 1997.