High reliability of GaInP/GaInAs 980-nm window laser

Conference on Lasers and Electro-Optics Europe - Technical Digest

Volumn , Issue , 1998, Pages 12-13

  Ikoma, Nobuyuki ^a   Hashimoto, Jun ichi ^a   Murata, Michio ^a   Katsuyuma, Tsukuru ^a   Yoshida, Ichiro ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; ION IMPLANTATION; LEAST SQUARES APPROXIMATIONS; NITROGEN; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

CATASTROPHIC OPTICAL MIRROR DAMAGE; CURRENT POWER CHARACTERISTICS; LINEAR EXTRAPOLATION;

SEMICONDUCTOR LASERS;

EID: 0031644812     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/cleo.1998.675797     Document Type: Conference Paper

References (0)