InGaAlP Zn-diffused window structure laser diodes fabricated by using highly Zn-doped GaAs layers

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 1998, Pages 147-148

  Watanabe, Minoru ^a   Ito, Yoshiyuki ^a   Shiozawa, Hideo ^a   Okada, Makoto ^a   Horiuchi, Osamu ^a   Tanaka, Akira ^a   Gen ei, Koichi ^a   Shimada, Naohiro ^a   Okuda, Hajime ^a   Fukuoka, Kazuo ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; ENERGY GAP; MASKS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; ZINC;

ZINC DIFFUSION METHODS;

SEMICONDUCTOR LASERS;

EID: 0032315843     PISSN: 08999406     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)