Highly reliable operation of high-power 0.98-μm InGaAs/InGaAsP lasers with a window structure fabricated by Si implantation

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 1998, Pages 19-20

  Sagawa, M ^a   Hiramoto, K ^a   Kikawa, T ^a   Tsuji, S ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

WINDOW STRUCTURE FABRICATION;

SEMICONDUCTOR LASERS;

EID: 0032319137     PISSN: 08999406     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)