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Applied Surface Science

Volumn 123-124, Issue , 1998, Pages 243-248

Diffusion of interfacial point defects studied by BEEM

(2) Meyer, T a Von Kanel H a

a ETH ZURICH (Switzerland)

Author keywords

Ballistic electron emission microscopy; CoSi 2; Diffusion; Interface; Point defects

Indexed keywords

ANNEALING; COBALT ALLOYS; CRYSTAL ORIENTATION; DENSITY (SPECIFIC GRAVITY); DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); ELECTRON EMISSION; ELECTRON MICROSCOPY; EPITAXIAL GROWTH; POINT DEFECTS; SEMICONDUCTING SILICON;

BALLISTIC ELECTRON EMISSION MICROSCOPY (BEEM);

SEMICONDUCTOR METAL BOUNDARIES;

EID: 0031683312 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(97)00482-0 Document Type: Article

Times cited : (2)

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