Ballistic electron emission microscopy on CoSi2/Si(111) interfaces: Band structure induced atomic-scale resolution and role of localized surface states

Physical Review Letters

Volumn 81, Issue 22, 1998, Pages 4963-4966

  Reuter, K ^a,c   Garcia Vidal, F J ^b   De Andres, P L ^a   Flores, F ^b   Heinz, K ^c  

^a INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

^b UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^c UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON ENERGY LEVELS; GREEN'S FUNCTION; INTEGRAL EQUATIONS; INTERFACES (MATERIALS); NUMERICAL ANALYSIS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SURFACE TREATMENT;

ATOMIC SCALE RESOLUTION; BALLISTIC ELECTRON EMISSION MICROSCOPY; ELECTRON BEAM INJECTION; ELECTRON FOCALIZATION; KELDYSH GREENS FUNCTION METHOD;

ELECTRON EMISSION;

EID: 0032583021     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.81.4963     Document Type: Article

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