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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 858-860

Extremely large amplitude random telegraph signals in a very narrow split-gate MOSFET at low temperatures

(4) Ishikuro, Hiroki a Saraya, Takuya a Hiramoto, Toshiro a Ikoma, Toshiaki b

a INSTITUTE OF INDUSTRIAL SCIENCE (Japan)

b Texas Instruments Japan Ltd (Japan)

Author keywords

MOSFET; Potential fluctuations; Random telegraph signal; Single electron trap; Split gate

Indexed keywords

CALCULATIONS; GATES (TRANSISTOR); ION IMPLANTATION; NUMERICAL METHODS; SEMICONDUCTOR DEVICE MANUFACTURE; SIGNAL PROCESSING; SILICON ON INSULATOR TECHNOLOGY; SPURIOUS SIGNAL NOISE; SUBSTRATES; ULSI CIRCUITS;

RANDOM TELEGRAPH SIGNALS; SEPARATION BY IMPLANTED OXYGEN; SINGLE ELECTRON TRAP; SPLIT GATE;

MOSFET DEVICES;

EID: 0030087505 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.858 Document Type: Article

Times cited : (6)

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