Scattering of pulsed trimethylgallium beam from GaAs(100), -(110), and -(111)B surfaces

Surface Science

Volumn 356, Issue 1-3, 1996, Pages 233-246

  Sasaki, Masahiro ^a,b   Yoshida, Seikoh ^a,c  

^a Optoelectronics Technology Research Laboratory   (Japan)

^b TOSHIBA CORPORATION   (Japan)

^c FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

Alkyl gallium; Chemical vapor deposition; Gallium arsenide; Low index single crystal surfaces; Models of surface chemical reactions; Molecule solid scattering and diffraction inelastic; Physical adsorption; Semiconducting surfaces

Indexed keywords

ADSORPTION; CHEMICAL VAPOR DEPOSITION; CHEMISORPTION; ELECTRON DIFFRACTION; ELECTRON SCATTERING; MATHEMATICAL MODELS; MOLECULAR BEAMS; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS; SURFACE STRUCTURE; SURFACE TREATMENT; SURFACES;

BARRIER HEIGHT; LOW INDEX SINGLE CRYSTAL SURFACES; PRECURSOR STATE; PULSED MOLECULAR BEAMS; TRIMETHYLGALLIUM;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030166008     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00019-2     Document Type: Article

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