Structural and chemical widths of general grain boundaries: modification of local structure and bonding by boron-doping in β-silicon carbide

Interface Science

Volumn 8, Issue 2, 2000, Pages 269-278

  Gu, Hui ^a,b   Shinoda, Yutaka ^a  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHEMICAL BONDS; CHEMICAL MODIFICATION; ELECTRON ENERGY LOSS SPECTROSCOPY; HIGH RESOLUTION ELECTRON MICROSCOPY; HOT ISOSTATIC PRESSING; POWDERS; SILICON CARBIDE; STRUCTURE (COMPOSITION); TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CHEMICAL WIDTH; CORE STRUCTURE; ENERGY LOSS NEAR EDGE STRUCTURE; GENERAL BOUNDARY;

GRAIN BOUNDARIES;

EID: 0034242025     PISSN: 09277056     EISSN: None     Source Type: Journal    
DOI: 10.1023/a:1008720404554     Document Type: Article

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