Dopant distribution in grain-boundary films in calcia-doped silicon nitride ceramics

Journal of the American Ceramic Society

Volumn 81, Issue 12, 1998, Pages 3125-3135

  Gu, Hui ^a,b,d   Pan, Xiaoqing ^b,d,e   Cannon, Rowland M ^c,d   Rühle, Manfred ^b,d  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d AMERICAN CERAMIC SOCIETY   (United States)

^e UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCIUM COMPOUNDS; CERAMIC MATERIALS; COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; GRAIN BOUNDARIES; INTERFACES (MATERIALS); SCANNING ELECTRON MICROSCOPY; STOICHIOMETRY; TRANSMISSION ELECTRON MICROSCOPY; VAN DER WAALS FORCES;

CALCIA; DOPANT DISTRIBUTION; GRAIN BOUNDARY FILMS;

SILICON NITRIDE;

EID: 0000364444     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.1998.tb02747.x     Document Type: Article

References (33)

1. 4 at High Temperatures," J. Am. Ceram. Soc., 63 [9-10] 513-17 (1980).
2. 4 with Rare-Earth-Oxide Additions," J. Am. Ceram. Soc., 64 [2] 304-309 (1981).
3. R. Raj, "Creep in Polycrystalline Aggregates by Matter Transport through a Liquid Phase," J. Geophys. Res., B, 87 [7] 4731-39 (1982).
4. F. F. Lange, "Fabrication and Properties of Dense Polyphase Silicon Nitride," Am. Ceram. Soc. Bull., 62 [12] 1368-74 (1983).
5. D. R. Clarke and G. Thomas, "Grain Boundary Phases in MgO Fluxed Silicon Nitride," J. Am. Ceram. Soc., 60 [11-12] 491-95 (1977).
6. 3 Fluxed Hot-Pressed Silicon Nitride," J. Am. Ceram. Soc., 61 [3-4] 114-18 (1978).
7. D. R. Clarke, "On the Determination of Thin Intergranular Films by Electron Microscopy," Ultramicroscopy, 4, 33-44 (1979).
8. H.-J. Kleebe, M. J. Hoffmann, and M. Rühle, "Influence of Second Phase Chemistry on Grain Boundary Film Thickness in Silicon Nitride," Z. Metallkd., 83 [8] 610-17 (1992).
9. M. K. Cinibulk, H.-J. Kleebe, and M. Rühle, "Quantitative Comparison of TEM Techniques for Determining Amorphous Intergranular Film Thickness," J. Am. Ceram. Soc., 76 [2] 426-32 (1993).
10. H.-J. Kleebe, M. K. Cinibulk, R. M. Cannon, and M. Rühle, "Statistical Analysis of the Intergranular Film Thickness in Silicon Nitride Ceramics," J. Am. Ceram. Soc., 76 [8] 1969-77 (1993).
11. H. Schmid and M. Rühle, "Structure of Special Grain Boundary in Sialon Ceramics" J. Mater. Sci., 19, 615-28 (1984).
12. D. R. Clarke, "On the Equilibrium Thickness of Intergranular Glass Phases in Ceramic Materials," J. Am. Ceram. Soc., 70 [1] 15-22 (1987).
13. 4 Ceramics. Edited by M. J. Hoffmann and G. Petzow. Kluwer Academic Publishers, Dordrecht, The Netherlands, 1994.
14. D. R. Clarke, T. M. Shaw, A. P. Philipse, and R. G. Horn, "Possible Electrical Double-Layer Contribution to the Equilibrium Thickness of Intergranular Glass Films in Polycrystalline Ceramics," J. Am. Ceram. Soc., 76 [5] 1201-204 (1993).
15. 3,-Fluxed Silicon Nitride Ceramics with and without CaO Addition," J. Eur. Ceram. Soc., 14, 1-11 (1994).
16. I. Tanaka, H.-J. Kleebe, M. K. Cinibulk, J. Bruley, D. R. Clarke, and M. Rühle, "Calcium Concentration Dependence of the Intergranular Film Thickness in Silicon Nitride," J. Am. Ceram. Soc., 77 [4] 911-14 (1994).
17. 4 Studied by Spatially Resolved Electron Energy-Loss Spectroscopy," Anal. Chim. Acta, 297, 97-104 (1994).
18. I. Tanaka, J. Bruley, H. Gu, M. J. Hoffmann, H.-J. Kleebe, R. M. Cannon, D. R. Clarke, and M. Rühle, "Composition and Thicknesses of Grain Boundary Films in Ca-doped Silicon Nitride Ceramics"; see Ref. 13, pp. 275-89.
19. J. N. Ness, W. M. Stobbs, and T. F. Page, "A TEM Fresnel Diffraction-Based Method for Characterizing Thin Grain-Boundary and Interfacial Films," Philos. Mag. A, 54, 679-702 (1986).
20. H. Gu, M. Ceh, S. Stemmer, H. Müllejans, and M. Rüble, "A Quantitative Approach for Spatially-Resolved Electron Energy-Loss Spectroscopy of Grain Boundaries and Planar Defects on a Subnanometer Scale," Ultramicroscopy, 59, 215-27 (1995).
21. J. A. S. Ikeda, Y.-M. Chiang, A. J. Garratt-Reed, and J. B. Vander Sande, "Space Charge Segregation at Grain Boundaries in Titanium Dioxide: II, Model Experiments," J. Am. Ceram. Soc., 76 [10] 2447-59 (1993).
22. Y.-M. Chiang, L. A. Silverman, R. H. French, and R. M. Cannon, "Thin Glass Film between Ultrafine Conductor Particles in Thick-Film Resistors," J. Am. Ceram. Soc., 77 [5] 1143-52 (1994).
23. H. Gu, R. M. Cannon, and M. Rühle, "Composition and Chemical Width of Ultrathin Amorphous Films at Grain Boundaries in Silicon Nitride," J. Mater. Res., 13 [2] 376-87 (1998).
24. C. Colliex, Tencé, E. Lefèvre, C. Mory, H. Gu, D. Bouchet, and C. Jeanguillaumem, "Electron Energy Loss Spectrometry Mapping," Mikrochim. Acta, 114/115, 71-87 (1994).
25. M. Tencé, M. Quartuccio, and C. Colliex, "PEELS Compositional Profiling and Mapping at Nanometer Spatial Resolution," Ultramicroscopy, 58, 42-54 (1995).
26. G. Duscher, "Oxidial Grain Boundary Phases in Silicon"; Ph.D. Thesis. University of Stuttgart, Stuttgart, Germany, 1996.
27. R. E. Loehman, "Structure, Formation, and Stability of Oxynitride Glasses"; see Ref. 13, pp. 167-73.
28. R. H. French, R. M. Cannon, L. K. DeNoyer, and Y.-M. Chaing, "Full Spectral Calculation of Non-retarded Hamaker Constants for Ceramics System from Interband Transition Strengths," Solid State Ionics, 75, 13-33 (1995).
29. I. Tanaka, K. Igashira, T. Okamoto, K. Niihara, and R. M. Cannon, "High-Temperature Fracture Mechanism of Low-Ca-Doped Silicon Nitride," J. Am. Ceram. Soc., 78 [3] 673-79 (1995).
30. 4: Consequences on the Intergranular Structure"; unpublished work.
31. M. Krämer, M. J. Hoffmann, and G. Petzow, "Grain Growth Studies of Silicon Nitride Dispersed in an Oxynitride Glass," J. Am. Ceram. Soc., 76 [11] 2778-84 (1993).
32. 4," J. Cryst. Growth, 140, 157-66 (1994).
33. 4 Ceramics"; see Ref. 13, pp. 59-72.