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EPJ Applied Physics

Volumn 11, Issue 1, 2000, Pages 29-34

Modeling of the spectral response of AlxGa1-xN p-n junction photodetectors

(6) Hanzaz, M a Bouhdada, A a Monroy, E b Munoz E b Gibart, P c Omnes F c

a HASSAN II UNIVERSITY (Morocco)

b UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

c CRHEA CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; CHARGE CARRIERS; CURRENT DENSITY; DIFFERENTIAL EQUATIONS; ELECTRON TRAPS; ENERGY GAP; GALLIUM COMPOUNDS; MATHEMATICAL MODELS; PHOTODETECTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SPECTRUM ANALYSIS;

DEEP TRAP LEVELS; DOPING DENSITY; FORBIDDEN GAP; GALLIUM NITRIDE; RECOMBINATION; SPECTRAL RESPONSE;

SEMICONDUCTOR JUNCTIONS;

EID: 0034228870 PISSN: 12860042 EISSN: None Source Type: Journal
DOI: 10.1051/epjap:2000137 Document Type: Article

Times cited : (5)

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