Experimental and theoretical results of room-temperature single-electron transistor formed by the atomic force microscope nano-oxidation process

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 4 I, 2000, Pages 1321-1325

  Gotoh, Y ^a   Matsumoto, K ^a   Maeda, T ^a   Cooper, E B ^b   Manalis, S R ^b   Fang, H ^c   Minne, S C ^d   Hunt, T ^d   Dai, H ^d   Harris, J ^d   Quate, C F ^d  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c Och Spine at New York Presbyterian Hospitals   (United States)

^d STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARBON; COMPUTER SIMULATION; CORUNDUM; CRYSTAL GROWTH; METALLIC FILMS; NANOTUBES; OXIDATION; SEMICONDUCTING SILICON; TITANIUM; TITANIUM OXIDES; TUNNEL JUNCTIONS;

COULOMB OSCILLATION; SINGLE-ELECTRON TRANSISTORS (SET); SINGLE-WALLED CARBON NANOTUBES (SWNT);

TRANSISTORS;

EID: 0034228673     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582347     Document Type: Article

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