Nature of Friedel oscillations around Si dopants in the GaAs(110) accumulation layer

Journal of Physics Condensed Matter

Volumn 12, Issue 30, 2000, Pages

  Inglesfield, J E ^a   Boon, M H ^b   Crampin, S ^c  

^a CARDIFF UNIVERSITY   (United Kingdom)

^b RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^c University of Bath   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; ELECTRON TUNNELING; OSCILLATIONS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

FRIEDEL OSCILLATIONS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034228234     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/12/30/102     Document Type: Article

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