Studies of far-infrared magneto-photoconductivity of D- centers in GaAs/AlxGa1-xAs multiple quantum wells

Solid State Communications

Volumn 112, Issue 12, 1999, Pages 675-680

  Shen, J L ^a   Lin, T Y ^b   Chen, Y F ^b   Chang, Y H ^b  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CARRIER CONCENTRATION; ELECTRON TRANSITIONS; HELIUM NEON LASERS; IMPURITIES; MAGNETIC FIELD EFFECTS; OPTICAL PROPERTIES; PHOTOCONDUCTIVITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SPECTRUM ANALYSIS;

BAND BENDING MODEL; BARRIER D CENTER; FAR INFRARED MAGNETOPHOTOCONDUCTIVITY; MAGNETIC VAPORIZATION; SEMICONDUCTING ALUMINUM GALLIUM ARSENIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033335140     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(99)00417-2     Document Type: Article

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