The self-organized In0.25Ga0.75As quantum dots grown by migration enhanced epitaxy

Journal of Crystal Growth

Volumn 183, Issue 3, 1998, Pages 279-283

  Cheng, Wen Qin ^a   Zhong, Zhen Yang ^a   Wu, Yuan ^a   Huang, Qi ^a   Zhou, Jun Ming ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

As; Dots; In0.25Ga0.75; MBE

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; WETTING;

MIGRATION ENHANCED EPITAXY;

SEMICONDUCTOR GROWTH;

EID: 0032472157     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00436-3     Document Type: Article

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