Optimal design of stagnation-flow MOVPE reactors with axisymmetric multi-aperture inlets

Materials Research Society Symposium - Proceedings

Volumn 490, Issue , 1998, Pages 161-166

  Gupta, V ^a   Theodoropoulos, C ^a   Peck, J D ^a   Mountziaris, T J ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN; FILM GROWTH; FLOW OF FLUIDS; MAGNETIC SEMICONDUCTORS; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTIMIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; TRANSPORT PROPERTIES;

AXISYMMETRIC MULTI APERTURE INLET; FILM THICKNESS; STAGNATION FLOW;

CHEMICAL REACTORS;

EID: 0032299751     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)