Bidimensional lifetime control for high-speed low-loss p-i-n rectifiers

IEEE Transactions on Power Electronics

Volumn 15, Issue 4, 2000, Pages 791-798

  Napoli, Ettore ^a  

^a UNIVERSITY OF NAPLES FEDERICO II   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRON IRRADIATION; ION IMPLANTATION; MIXER CIRCUITS; SEMICONDUCTOR DIODES; SEMICONDUCTOR SWITCHES; TWO DIMENSIONAL;

CHARGE CARRIER LIFETIME; DYNAMIC LOSSES; MIXED MODE CIRCUIT DEVICE SIMULATIONS; POSITIVE INTRINSIC NEGATIVE DIODE; SEMICONDUCTOR DEVICE ION IMPLANTATION; STATIC LOSSES;

ELECTRON TUBE RECTIFIERS;

EID: 0034224129     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/63.849050     Document Type: Article

References (28)

1. S. Coffa, A. Magri, F. Frisina, and V. Privitera, "Power bipolar transistors with a fast recovery integrated diode," IEEE Trans. Electron. Devices, vol. 43, pp. 836-839, May 1996.
2. S. Pendharkar and K. Shenai, "Optimization of the anti-parallel diode in an IGBT module for hard-switching applications," IEEE Trans. Electron. Devices, vol. 44, pp. 879-886, May 1997.
3. B. Baliga, Power Semiconductor Devices. New York: PWS, 1996.
4. M. Bruckmann, E. Baudelot, B. Weis, and H. Mitlhener, "Switching behavior of diodes based on new semiconductor materials and silicon - A comparative study," in Proc. EPE'97, Trondheim, Norway, Sept. 1997, pp. 1513-1517.
5. Y. Shimizu, M. Naito, S. Murakami, and Y. Terasawa, "High-speed low-loss p-n diode having a channel structure," IEEE Trans. Electron Devices, vol. ED-31, pp. 1314-1319, Sept. 1984.
6. R. Wiget, M. Tzvetkova, and E. Burte, "Fast power diodes fabricated on silicon to silicon direct bonded (SDB) material," in Proc. EPE Conf., Sevilla, Spain, Sept. 1995, pp. 1588-1593.
7. H. Schlangenotto, J. Serafin, F. Sawitzki, and H. Maeder, "Improved recovery of fast power diodes with self-adjusting p emitter efficiency," IEEE Electron. Device. Lett., vol. 10, pp. 322-324, July 1989.
8. H. Schlangenotto and M. Fullmann, "A hybrid fast power diode with strongly improved reverse recovery," in Proc. EPE Conf., Brighton, U.K., 1993, pp. 185-190.
9. B. Baliga and E. Sun, "Comparison of gold, platinum and electron irradiation for controlling lifetime in power rectifier," IEEE Trans. Electron Devices, vol. ED-24, pp. 685-688, 1977.
10. Y Morikawa, T. Miura, M. Kekura, S. Miyazaki, and F. Ichikawa, "Sloping lifetime control by electron irradiation for 4.5 kV PT-SIThs," in Proc. ISPSD Conf., Weimar, Germany, 1997, pp. 61-64.
11. M. Saggio, V. Raineri, R. Letor, and F. Frisina, "Innovative localized lifetime control in high-speed IGBT's," IEEE Electron Device Lett., vol. 18, pp. 333-335, July 1997.
12. A. Mogro-Campero, R. Love, M. Chang, and R. Dyer, "Localized life-time control in insulated-gate transistors by proton implantation," IEEE Trans. Electron. Devices, vol. ED-33, pp. 1667-1671, Nov. 1986.
13. F. Robb, I. Wan, and S. Yu, "Increasing the switching speed of high-voltage IGBTs," in Proc. ISPSD Conf., Weimar, Germany, 1997, pp. 251-254.
14. M. Baskowski, N. Galster, A. Hallen, and A. Weber, "Proton irradiation for improved GTO and thyristors," in Proc. ISPSD Conf., Weimar, Germany, 1997, pp. 77-80.
15. A. Hallen, M. Bakowski, and M. Lundqvist, "Multiple proton energy irradiation for improved GTO thryistors," Solid-State Electron., vol. 36, no. 2, pp. 133-141, 1993.
16. Y. Konishi, Y Onishi, and K. Sakurai, "Optimized lifetime control for the superior IGBTs," in Proc. ISPSD Conf., Maui, HI, 1996, pp. 335-338.
17. V. Benda, "Design considerations for fast soft reverse recovery diodes," in Proc. EPE Conf., Brighton, U.K., 1993, pp. 288-292.
18. V. Temple and F. Holroyd, "Optimizing carrier lifetime profile for improved tradeoff between turnoff time and forward drop," IEEE Trans. Electron Devices, vol. ED-30, pp. 782-790, July 1983.
19. J. Lutz, "Axial recombination centre technology for freewheeling diodes," in Proc. EPE Conf., Trondheim, Norway, 1997, pp. 1502-1506.
20. J. Vobecky, P. Hazdra, and J. Homola, "Optimization of power diode characteristic by means of ion irradiation," IEEE Trans. Electron Devices, vol. 43, pp. 2283-2289, Dec. 1996.
21. E. Napoli and A. Strollo, "Power p-i-n diode performance improvement through local lifetime control: Numerical analysis," in Proc. ComPEl Conf., Como, Italy, July 19-22, 1998, pp. 49-54.
22. E. Napoli, A. Strollo, and P. Spirito, "Numerical analysis of local lifetime control for high speed low-loss p-i-n diode design," IEEE Trans. Power Electron., vol. 14, pp. 615-621, July 1999.
23. E. Napoli, A. Strollo, and P. Spirito, "Fast power rectifier design using local lifetime and emitter efficiency control techniques," Microelectron. J., vol. 30, pp. 505-512, Apr. 1999.
24. K. Matsushita, T. Shinoe, M. Tsukuda, Y Minami, J. Miwa, S. Yanagisawa, and H. Ohashi, "4.5 KV high speed and rugged planar diode with novel carrier distribution control," in Proc. ISPSD Conf., Kyoto, Japan, 1998, pp. 191-194.
25. M. Rahimo, D. Crees, and N. Shammas, "A nove concept for fast recovery diodes having junction charge extraction (JCE) regions," in Proc. ISPSD Conf., Kyoto, Japan, 1998, pp. 309-312.
26. MEDICI User Guide, Technology Modeling Associate, Inc., Palo Alto, CA, 1993.
27. +-p silicon diodes," IEEE Trans. Electron Devices, vol. ED-29, pp. 284-291, Feb. 1982.
28. M. Rahimo, P. Hoban, and N. Shammas, "Effects of temperature, forward current and commutating di/dt on the reverse recovery behavior of Fast Power Diodes," in Proc. EPE Conf., Seville, Spain, Sept. 1995, pp. 1577-1582.