Effects of electrical stress and temperature on the properties of polycrystalline silicon thin-film transistors fabricated by metal induced lateral crystallization

IEEE Electron Device Letters

Volumn 21, Issue 7, 2000, Pages 347-349

  Kim, Tae Kyung ^a   Kim, Gi Bum ^a   Lee, Byung Il ^a   Joo, Seung Ki ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; NICKEL; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; STRESSES; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

ELECTRICAL STRESS; METAL INDUCED LATERAL CRYSTALLIZATION; NICKEL OFFSET METHOD; POLYCRYSTALLINE SILICON;

THIN FILM TRANSISTORS;

EID: 0034217274     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.847376     Document Type: Article

References (12)

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