ECR plasma oxidation of amorphous silicon for improvement of the interface state in a poly silicon thin film transistor

Materials Research Society Symposium - Proceedings

Volumn 424, Issue , 1996, Pages 189-194

  Ihn, Tae Hyung ^a   Lee, Seok Woon ^a   Lee, Byung Il ^a   Jeon, Yoo Chan ^a   Joo, Seung Ki ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; CRYSTALLIZATION; ELECTRON CYCLOTRON RESONANCE; GATES (TRANSISTOR); INTERFACES (MATERIALS); OXIDATION; PLASMA APPLICATIONS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SURFACE ROUGHNESS;

ELECTRON CYCLOTRON RESONANCE (ECR) PLASMA; GATE VOLTAGES;

THIN FILM TRANSISTORS;

EID: 0030388260     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-424-189     Document Type: Conference Paper

References (12)