Bias-temperature-stress induced mobility improvement in 4K-SiC MOSFETs

Materials Research Society Symposium - Proceedings

Volumn 572, Issue , 1999, Pages 63-68

  Chatty, K ^a   Chow, T P ^a   Gutmann, R J ^a   Arnold, E ^b   Alok, D ^b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; INTERFACES (MATERIALS); MOS CAPACITORS; MOSFET DEVICES; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

BIAS TEMPERATURE STRESS; CHARGE DENSITY; FIELD EFFECT MOBILITY; INTERFACIAL IONS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033345553     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (4)

1. T. Ouisse, Phys. Stat. Sol. (a) 162, 239 (1997).
2. E. Arnold, N. Ramungul, T. P. Chow and M. Ghezzo, Proc. 7th Int. Conf. on SiC, Hi-nitrides and related materials, Stockholm, 1013 (1997).
3. S. Sridevan and B. J. Baliga, IEEE Electron Device Lett. 19, 228 (1998).
4. E. H. Nicollian and J. R. Brews,"MOS( Metal Oxide Semiconductor) Physics and Technology, Ch 15, Wiley 1982.