Electrical properties of multiple high-dose Si implantation in p-GaN

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 7 B, 1999, Pages

  Lai, Wei Chih ^a   Yokoyama, Mesio ^a   Tsai, Chiung Chi ^a   Chang, Chen Shiung ^a   Guo, Jan Dar ^a   Tsang, Jian Shihn ^a   Chan, Shih Hsiung ^a   Chang, Chun Yen ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY OF SOLIDS; EPITAXIAL GROWTH; FILM GROWTH; ION IMPLANTATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0032670467     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l802     Document Type: Article

References (0)