WNcursive Greek chi/WN0.5cursive Greek chi/W ohmic contact to n-InGaAs and its application to AIGaAs/GaAs heterojunction bipolar transistors

Journal of the Korean Physical Society

Volumn 37, Issue 1, 2000, Pages 43-48

  Lee, Jong Min ^a   Choi, In Hoon ^a   Park, Sung Ho ^b   Min, Byoung Gue ^b   Lee, Tae Woo ^b   Park, Moon Pyung ^b   Lee, Kyung Ho ^b  

^a Korea University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034215273     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (20)

1. J-I. Song, C. Caneau, K-B. Chongh and W-P. Hong, IEEE Electron. Dev. Lett. 15, 10 (1994).
2. T. Yoshimasu, M. Akagi, N. Tanba and S. Hara, IEEE J. Solid-State Circ. 33, 1290 (1998).
3. T-W. Lee, S. H. Park, J-M. Lee, B-G. Min, M-P. Park and J-H. Song, J. Korean Phys. Soc. 35, S1080 (1999).
4. Y-S. Kim, S-J. Kang, N-S. Kim, S. H. Park, T-W. Lee and M-P. Park, Electron. Lett. 33, 901 (1997).
5. T. S. Kuan, P. E. Batson, T. N. Jackson, H. Rupprecht and E. L. Wilkie, J. Appl. Phys. 54, 952 (1983).
6. M. Murakami, K. O. Childs, J. M. Baker and A. Callegari, J. Vac. Sci. Technol. B4, 903 (1986).
7. S. H. Park, T-W. Lee, J-M. Lee, B-G. Min, M-P. Park, J. Y. Kim and I-H. Kim, J. Korean Phys. Soc. 34, S273 (1999).
8. S. H. Park, J-M. Lee, T-W. Lee, M-P. Park, C. S. Park, I-H. Kim and J. Y. Kim, J. Korean Phys. Soc. 34, S427 (1999).
9. J-M. Lee, I-H. Choi, T-W. Lee, S. H. Park, M-P. Park and C. S. Park, Ungyong Mulli(Korean J. of Appl. Phys.) 11, 732 (1998).
10. D. Y. Chen, Y. A. Chang, D. Swenson and F. R. Shepherd, J. Mater. Res. 13, 959 (1998).
11. E. Nebauer, U. Merkel and J. Wurfl, Semicond. Sci. Technol. 12, 1072 (1997).
12. N. Uchitomi, M. Nagaoka, K. Shimada, T. Mizoguchi and N. Toyoda, J. Vac. Sci. Technol. B4, 1392 (1986).
13. A. Lahav, F. Ren and R. F. Kopf, Appl. Phys. Lett. 54, 1693 (1989).
14. L. G. Shantharama, H. Schumacher, H. P. Leblanc, R. Esagui, R. Bhat and M. Koza, Electron. Lett. 26, 1127 (1990).
15. I-H. Kim, S. H. Park, J. Y. Kim, J-M. Lee, T-W. Lee and M-P. Park, Jpn. J. Appl. Phys. 37, 1348 (1998).
16. J. W. Wu, C. Y. Chang, K. C. Lin, E. Y. Chang, J. S. Chen and C. T. Lee, J. Electro. Mat. 24, 79 (1995).
17. K. M. Yu, J. M. Jaklevic, E. E. Haller, S. K. Cheung and S. P. Kwok, J. Appl. Phys. 64, 1284 (1988).
18. C. W. Lee and Y. T. Kim, Solid-State Electronics 38, 679 (1995).
19. M. Nagaoka, K. Ishida, T. Matsunaga, K. Nishihori, T. Hashimoto, M. Yoshimura, Y. Tanabe, M. Mihara, Y. Kitaura and N. Uchitomi, Jpn. J. Appl. Phys. 33, 767 (1994).
20. I-H. Kim, S. H. Park, T-W. Lee and M-P. Park, Appl. Phys. Lett. 71, 1854 (1997).