Thermodynamically stable tungsten ohmic contacts to n-In0.53Ga0.47As

Journal of Materials Research

Volumn 13, Issue 4, 1998, Pages 959-964

  Chen, D Y ^a   Chang, Y A ^b   Swenson, D ^c   Shepherd, F R ^d  

^a NOKIA RESEARCH CENTER   (United States)

^b University of Wisconsin Madison   (United States)

^c Michigan Technological University   (United States)

^d NORTEL NETWORKS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; ELECTRIC RESISTANCE MEASUREMENT; SEMICONDUCTING INDIUM COMPOUNDS; THERMODYNAMICS; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN;

QUATERNARY SYSTEM; RAPID THERMAL ANNEALING; TRANSMISSION LINE MODEL;

OHMIC CONTACTS;

EID: 0032046861     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1998.0134     Document Type: Article

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