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IEE Proceedings: Optoelectronics

Volumn 145, Issue 5, 1998, Pages 257-260

Room temperature InPSb/lnAs and InPSb/lnAs/ InAsSb mid-infrared emitting diodes grown by MOVPE

(4) Stein, A a Puttjer D a Behres, A a Heime, K a

a RWTH AACHEN UNIVERSITY (Germany)

Author keywords

Diodes; MO VPE

Indexed keywords

COMPOSITION EFFECTS; ELECTROLUMINESCENCE; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ANTIMONY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SPECTRUM ANALYSIS; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

FULL WIDTH AT HALF MAXIMUM (FWHM); MID-INFRARED EMITTING DIODES; MULTIQUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 0032178871 PISSN: 13502433 EISSN: None Source Type: Journal
DOI: 10.1049/ip-opt:19982302 Document Type: Article

Times cited : (14)

References (7)

1
- 0027601886
- 1993, 29, (10), pp. 890-891
- DOBBELAERE, W., DE BOECK, J., BRUYNSERAEDE, C, MERTENS, R., and BORGHS, G.: 'InAsSb light emitting diodes and their application to infra-red gas sensors', Electron. Lett., 1993, 29, (10), pp. 890-891
- DE BOECK, J., BRUYNSERAEDE, C, MERTENS, R., and BORGHS, G.: 'InAsSb Light Emitting Diodes and Their Application to Infra-red Gas Sensors', Electron. Lett.
- Dobbelaere, W.¹

2
- 0030082485
- 1996, 32, (5), pp. 479-4180
- 2 at room temperature', Electron. Lett., 1996, 32, (5), pp. 479-4180
- 2 at Room Temperature', Electron. Lett.
- Mao, Y.¹

3
- 0028371887
- 1994, 64, (7), pp. 812-814
- KURTZ, S.R., BIEFELD, R.M., DAWSON, L.R., BAUCOM, K.C., and HOWARD, A.J.: 'Midwave (4 um) infrared lasers and light-emitting diodes with biaxially compressed InAsSb active regions', Appl. Phys. Lett., 1994, 64, (7), pp. 812-814
- R., BIEFELD, R.M., DAWSON, L.R., BAUCOM, K.C., and HOWARD, A.J.: 'Midwave (4 Um) Infrared Lasers and Light-emitting Diodes with Biaxially Compressed InAsSb Active Regions', Appl. Phys. Lett.
- Kurtz, S.¹

4
- 0031153602
- 1997, 3, (3), pp. 739-748
- BIEFELD, R.M., KURTZ, S.R., and ALLERMAN, A.A.: The metal-organic chemical vapour deposition growth and properties of InAsSb mid-infrared (3-6 (im) lasers and LEDs', IEEE J. Sel. Top. Quantum Electron.. 1997, 3, (3), pp. 739-748
- M., KURTZ, S.R., and ALLERMAN, A.A.: the Metal-organic Chemical Vapour Deposition Growth and Properties of InAsSb Mid-infrared 3-6 (Im) Lasers and LEDs', IEEE J. Sel. Top. Quantum Electron..
- Biefeld, R.¹

5
- 0032477154
- 1998, (to be published)
- BEHRES, A., PÜTTJER, D., and HEIME, K.: 'LP-MOVPE and characterization of strained InAs(P)/InAsSb superlattices for IR emitters', J. Cryst. Growth, 1998, (to be published)
- PÜTTJER, D., and HEIME, K.: 'LP-MOVPE and Characterization of Strained InAs(P)/InAsSb Superlattices for IR Emitters', J. Cryst. Growth
- Behres, A.¹

6
- 0031257423
- 1997, 26, (10), pp. 1221-1224
- HEUKENfM., EICHEL-STREIBER, C.V., BEHRES, A., SCHINELLER, B., HEIME, K., MENDORF, C., BROCKT, G., and LAKNER, H.: 'MOVPE growth of InPSb/InAs heterostructures for mid-infrared emitters', J. Eleclr. Mater., 1997, 26, (10), pp. 1221-1224
- EICHEL-STREIBER, C.V., BEHRES, A., SCHINELLER, B., HEIME, K., MENDORF, C., BROCKT, G., and LAKNER, H.: 'MOVPE Growth of InPSb/InAs Heterostructures for Mid-infrared Emitters', J. Eleclr. Mater.
- Heukenf, M.¹

7
- 0001129545
- 1990, 67, (II), pp. 7034-7038
- FANG, Z.M., MA, K.Y., JAW, D.H., COHEN, R.M., and STRINGFELLOW, G.B.: 'Photoluminescence of InSb, InAs and InAsSb grown by organometallic vapour phase epitaxy', J. Appl. Phys., 1990, 67, (II), pp. 7034-7038
- M., MA, K.Y., JAW, D.H., COHEN, R.M., and STRINGFELLOW, G.B.: 'Photoluminescence of InSb, InAs and InAsSb Grown by Organometallic Vapour Phase Epitaxy', J. Appl. Phys.
- Fang, Z.¹

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