Room-temperature type-II W quantum well diode laser with broadened waveguide emitting at λ = 3.30 μm

Electronics Letters

Volumn 35, Issue 20, 1999, Pages 1743-1745

  Lee, H ^a   Olafsen, L J ^b   Menna, R J ^a   Bewley, W W ^b   Martinelli, R U ^a   Vurgaftman, I ^b   Garbuzov, D Z ^a   Felix, C L ^b   Maiorov, M ^c   Meyer, J R ^b   Connolly, J C ^a   Sugg, A R ^c   Olsen, G H ^c  

^a SARNOFF CORPORATION   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c GOODRICH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC DENSITY OF STATES; LASER MODES; LASER PULSES; MOLECULAR BEAM EPITAXY; OPTICAL VARIABLES MEASUREMENT; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE;

CONTINUOUS WAVE MEASUREMENT; INTERWELL TUNNELING; PULSED THRESHOLD CURRENT DENSITIES;

QUANTUM WELL LASERS;

EID: 0033195257     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19991204     Document Type: Article

References (10)

1. HASENBERG, T.C., MILES, R.H., KOST, A.R., and WEST, L.: 'Recent advances in Sb-based midwave-infrared lasers', IEEE J. Quantum Electron., 1997, 33, (8), pp. 1403-1406
2. CHOI, H.K., TURNER, G.W., MANFRA, M.J., and CONNORS, M.K.: '175 K continuous wave operation of InAsSb/InAlAsSb quantum-well lasers emitting at 3.5 μm', Appl. Phys. Lett., 1996, 68, (21), pp. 2936-2938
3. CHOI, H.K., EGLASH, S.J., and TURNER, G.W.: 'Double-heterostructure diode lasers emitting at 3 μm with a metastable GaInAsSb active layer and AlGaAsSb cladding layers', Appl. Phys. Lett., 1994, 64, (19), pp. 2474-2476
4. CAPASSO, F., FAIST, J., SIRTORI, C, and CHO, A.Y.: 'Infrared (4-11 μm) quantum cascade lasers', Solid State Commun., 1997, 102, (2-3), pp. 231-236
5. OLAFSEN, L.J., AIFER, E.H., VURGAFTMAN, I., BEWLEY, W.W., FELIX, C.L., MEYER, J.R., ZHANG, D., LIN, C.-H., and PEI, S.S.: 'Near-room-temperature mid-IR interband cascade laser', Appl. Phys. Lett., 1998, 72, (19), pp. 2370-2372
6. FELIX, C.L., BEWLEY, W.W., VURGAFTMAN, I., MEYER, J.R., GOLDBERG, L., CHOW, D.H., and SELVIG, E.: 'Midinfrared vertical-cavity surface-emitting laser', Appl. Phys. Lett., 1997, 71, (24), pp. 3483-3485
7. BEWLEY, W.W., FELIX, C.L., VURGAFTMAN, I., STOKES, D.W., AIFER, E.H., OLAFSEN, L.J., MEYER, J.R., YANG, M.J., SHANABROOK, B.V., LEE, H., MARTINELLI, R.U., and SUGG, A.R.: 'High-temperature continuous-wave 3-6.1 μm "W" lasers with diamond-pressure-bond heat sinking', Appl. Phys. Lett., 1999, 74, (8), pp. 1075-1077
8. BEWLEY, W.W., AIFER, E.H., FELIX, C.L., VURGAFTMAN, I., MEYER, J.R., LIN, C.-H., MURRY, S.J., ZHANG, D., and PEI, S.S.: 'High-temperature type-II superlattice diode laser at λ = 2.9 μm', Appl. Phys. Lett., 1997, 71, (25), pp. 3607-3609
9. MEYER, J.R., HOFFMAN, C.A., BARTOLI, F.J., and RAM-MOHAN, L.R.: Type-II quantum-well lasers for the mid-wavelength infrared', Appl. Phys. Lett., 1995, 67, (6), pp. 757-759
10. GARBUZOV, D., MAIOROV, M., LEE, H., KHALFIN, V., MARTINELLI, R., and CONNOLLY, J.: 'Temperature dependence of continuous wave threshold current for 2.3-2.6 μm InGaAsSb/AlGaAsSb separate confinement heterostructure quantum well semiconductor diode lasers', Appl. Phys. Lett., 1999, 74, (20), pp. 2990-2992