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Volumn 195, Issue 1-4, 1998, Pages 373-377

Low-pressure metal organic vapour-phase epitaxy and characterization of strained InAs(P)/InAsSb superlattices for infrared emitters

Author keywords

InAsP; InAsSb; Photoluminescence measurements; Superlattices; Vapour phase epitaxy

Indexed keywords

INFRARED RADIATION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; THERMAL EFFECTS; X RAY CRYSTALLOGRAPHY;

EID: 0032477154     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00669-1     Document Type: Article
Times cited : (8)

References (9)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.