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Volumn 195, Issue 1-4, 1998, Pages 373-377
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Low-pressure metal organic vapour-phase epitaxy and characterization of strained InAs(P)/InAsSb superlattices for infrared emitters
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Author keywords
InAsP; InAsSb; Photoluminescence measurements; Superlattices; Vapour phase epitaxy
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Indexed keywords
INFRARED RADIATION;
METALLORGANIC VAPOR PHASE EPITAXY;
PHOTOLUMINESCENCE;
SEMICONDUCTOR DIODES;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR SUPERLATTICES;
THERMAL EFFECTS;
X RAY CRYSTALLOGRAPHY;
INFRARED EMITTERS;
SEMICONDUCTING INDIUM COMPOUNDS;
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EID: 0032477154
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(98)00669-1 Document Type: Article |
Times cited : (8)
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References (9)
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