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Volumn 38, Issue 6 A, 1999, Pages 3422-3425

Initial oxidation processes of H-terminated Si(100) surfaces analyzed using a random sequential adsorption model

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; ELECTRON ENERGY LOSS SPECTROSCOPY; GAS ADSORPTION; HYDROGEN; MATHEMATICAL MODELS; OXIDATION; PROBABILITY; RANDOM PROCESSES;

HIGH-RESOLUTION ELECTRON ENERGY LOSS SPECTROSCOPY (HREELS); RANDOM SEQUENTIAL ADSORPTION (RSA) MODEL;

SEMICONDUCTING SILICON;

EID: 0032641624 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.3422 Document Type: Article

Times cited : (7)

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