Dielectric-base transistors with doped channel

Applied Physics Letters

Volumn 70, Issue 21, 1997, Pages 2900-2902

  Hato, Tsunehiro ^a   Yoshida, Akira ^a   Yoshida, Chikako ^a   Suzuki, Hideo ^a   Yokoyama, Naoki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); HIGH TEMPERATURE SUPERCONDUCTORS; LANTHANUM COMPOUNDS; PERMITTIVITY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; STRONTIUM COMPOUNDS; VOLTAGE MEASUREMENT; YTTRIUM COMPOUNDS;

DIELECTRIC BASED TRANSISTORS; INDIUM OXIDE; LANTHANUM TITANATE; STRONTIUM TITANATE; VOLTAGE AMPLIFICATION FACTOR; YTTRIUM BARIUM COPPER OXIDE;

TRANSISTORS;

EID: 0031143637     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119047     Document Type: Article

References (7)

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