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Surface Review and Letters

Volumn 4, Issue 1, 1997, Pages 65-70

Atomic structure of the In on Si(111) (4 × 1) surface

(4) Collazo Davila, C a Marks, L D a Nishii, K b Tanishiro, Y b

a Northwestern University (United States)

b TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0031313068 PISSN: 0218625X EISSN: None Source Type: Journal
DOI: 10.1142/S0218625X97000110 Document Type: Article

Times cited : (42)

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