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Volumn 357-358, Issue , 1996, Pages 407-413

Dynamic observation of In adsorption on Si(111) surfaces by UHV high-temperature scanning tunneling microscopy

(7) Tanishiro, Y a Kaneko, K a Minoda, H a Yagi, K a Sueyoshi, T b Sato, T b Iwatsuki, M b

Author keywords

Adsorption; Indium; Scanning tunneling microscopy; Silicon; Single crystal surfaces; Surface structure, morphology, roughness, and topography

Indexed keywords

DEPOSITION; DESORPTION; HIGH TEMPERATURE OPERATIONS; INDIUM; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SILICON; SINGLE CRYSTALS; SURFACE PHENOMENA; SURFACE ROUGHNESS; SURFACE STRUCTURE;

DYNAMIC OBSERVATION; SINGLE CRYSTAL SURFACES; SURFACE TOPOGRAPHY;

ADSORPTION;

EID: 0030165441 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/0039-6028(96)00189-6 Document Type: Article

Times cited : (28)

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