SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 398, Issue 1-2, 1998, Pages 60-69

The role of Si atoms in In/Si (111) surface phase formation

(8) Saranin, A A a,b,c Zotov, A V a,b,d Lifshits, V G a Numata, T b Kubo, O b Tani, H b Katayama, M b Oura, K b

a INSTITUTE OF AUTOMATION AND CONTROL PROCESSES (Russian Federation)

b OSAKA UNIVERSITY (Japan)

c FAR EASTERN FEDERAL UNIVERSITY (Russian Federation)

d VLADIVOSTOK STATE UNIVERSITY OF ECONOMICS AND SERVICE (Russian Federation)

Author keywords

Atom solid interactions; Auger electron spectroscopy; Indium; Low energy electron diffraction; Scanning tunneling microscopy; Silicon; Surface structure, morphology, roughness, and topography

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CRYSTAL ATOMIC STRUCTURE; DEPOSITION; ELECTRON TRANSITIONS; INDIUM; LOW ENERGY ELECTRON DIFFRACTION; MASS TRANSFER; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SILICON; SUBSTRATES; SURFACE ROUGHNESS;

SURFACE RECONSTRUCTION; SURFACE TOPOGRAPHY;

SURFACE PHENOMENA;

EID: 0031998595 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(98)80011-3 Document Type: Article

Times cited : (17)

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