Influence of As autodoping from GaAs substrates on thick cubic GaN growth by halide vapor phase epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 5 B, 1998, Pages

  Tsuchiya, H ^a   Sunaba, K ^a   Minami, M ^a   Suemasu, T ^a   Hasegawa, F ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; DOPING (ADDITIVES); EPITAXIAL GROWTH; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES;

HALIDE VAPOR PHASE EPITAXY;

NITRIDES;

EID: 0032068327     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l568     Document Type: Article

References (9)