Parasitic resistance considerations of using elevated source/drain technology for deep submicron metal oxide semiconductor field effect transistors

Journal of the Electrochemical Society

Volumn 145, Issue 6, 1998, Pages 2131-2137

  Sun, J ^a,c   Bartholomew, R F ^a   Bellur, K ^a   Srivastava, A ^a   Osburn, C M ^a   Masnari, N A ^a   Westhoff, R ^b  

^a North Carolina State University   (United States)

^b Lawrence Semiconduct Res Lab   (United States)

^c ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; LEAKAGE CURRENTS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SUBSTRATES;

ELEVATED SOURCE/DRAIN TECHNOLOGY; PARASITIC RESISTANCE; SILICIDATION;

MOSFET DEVICES;

EID: 0032094734     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838607     Document Type: Article

References (19)

1. National Technology Roadmap for Semiconductors, Semiconductor Industry Association, 1994
2. C. M. Osburn, M. Y. Tsai, S. Roberts, C. J. Lucchese, and C. Y. Ting, in VLSI Science and Technology, C. J. Dell'Oca and W. Murray Bullis, Editors, PV 82-7, p. 213, The Electrochemical Society Proceedings eries, Pennington, NJ (1982).
3. C. K. Lau, Y. C. See, D. B. Scott, J. M. Bridges, S. M. Peran, and R. D. Davies, Tech. Dig. Int. Electron Devices Meet., p. 714 (1982).
4. M. E. Alperin, T. C. Holloway, R. A. Haken, C. D. Cosmeyer, R. V. Karnaugh, and W. D. Parmantie, IEEE Trans. Electron Devices, ED-32, 141 (1985).
5. C. M. Osburn, J. Electron. Mater., 19, 67 (1990).
6. Y. Taur, J. Y. C. Sun, D. Moy, L. K. Wang, B. Davari, S. P. Klepner, and C. Y. Ting, IEEE Trans. Electron Devices, ED-34, 575 (1987)
7. S. Wong, D. Bradbury, D. Chen, and K. Chiu, in Tech. Dig. Int. Electron Device Meet., p. 634 (1984).
8. H. Shibata, Y. Suizu, S. Samata, T. Matsuno, and K. Hashimoto, Tech. Dig. of Int. Electron Devices Meet., 590 (1987).
9. J. R. Pfiester, R. D. Sivan, H. M. Liaw, C. A. Seelbach, and C. D. Gunderson, IEEE Electron Device Lett., EDL-11, 365 (1990).
10. K. K. Ng and W. T. Lynch, IEEE Trans. Electron Devices, ED-34, 354 (1987).
11. A. H. Perera and J. P. Krusius, Tech. Dig. Int. Electron Devices Meet., p. 625 (1989).
12. J. Sun, J. Y. Tsai, K. F. Yee, and C. M. Osburn, in Proceedings on Microelectronic Device and Multilevel Interconnection Technology II, International Society for Optical Engineering, 2875, 178 (1996).
13. K. X. Zhang, C. M. Osburn, G. Hames, C. Parker, and A. Bayoumi, J. Electrochem. Soc., 143, 744 (1996).
14. A. Srivastava, J. Sun, K. Bellur, R. F. Bartholomew, P. O'Neil, M. Celik, C. M. Osburn, N. A. Masnari, M. C. Ozturk, R. Westhoff, and B. Fowler, ULSI Science and Technology, H. Z. Massoud, H. Iwai, C. Claeys, and R. B. Fair, Editors, PV97-3, p. 571, The Electrochemical Society Proceedings Series, Pennington, NJ (1997).
15. J. Sun, R. F. Bartholomew, K. Bellur, A. Srivastava, P. A. O'Neil, K. E. Violette, M. C. Ozturk, and C. M. Osburn, Mater. Res. Soc. Symp. Proc., 429, 343 (1996).
16. J. G. Chern, P. Chang, R. F. Motta, and N. Godinho, IEEE Electron Device Lett., EDL-1, 170 (1980).
17. J. Sun and C. M. Osburn, IEEE Trans. Electron Devices, June (1998).
18. M. Rodder, S. Aur, and I. C. Chen, Tech. Dig. Int. Electron Devices Meet., 415 (1995).
19. J. Sun, R. F. Bartholomew, K. Bellur, A. Srivastava, C. M. Osburn, R. Westhoff, and B. Fowler, J. Electrochem. Soc., 144, 3659 (1997).