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Volumn 6, Issue 5, 1996, Pages 207-208

Progress toward solid-state local oscillators at 1 THz

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; APPROXIMATION THEORY; CRYSTAL WHISKERS; ELECTRIC BREAKDOWN; EPITAXIAL GROWTH; MULTIPLYING CIRCUITS; OPTIMIZATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; VARACTORS;

EID: 0030151172     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.491507     Document Type: Article
Times cited : (44)

References (10)
  • 2
    • 0027612176 scopus 로고
    • Consideration of velocity saturation in the design of GaAs varactor diodes
    • June
    • T. W. Crowe, W. C. B. Peatman, R. Zimmermann, and P. Zimmermann, " Consideration of velocity saturation in the design of GaAs varactor diodes," IEEE Microwave Guided Wave Lett., vol. 3, no. 6, pp. 161-163, June 1993.
    • (1993) IEEE Microwave Guided Wave Lett. , vol.3 , Issue.6 , pp. 161-163
    • Crowe, T.W.1    Peatman, W.C.B.2    Zimmermann, R.3    Zimmermann, P.4
  • 5
    • 0029289614 scopus 로고
    • On the modeling and optimization of Schottky varactor frequency multipliers at submillimeter wavelengths
    • Apr.
    • J. T. Louhi and A. V. Räisänen, "On the modeling and optimization of Schottky varactor frequency multipliers at submillimeter wavelengths," IEEE Microwave Theory Tech., vol. 43, no. 4, pp. 922-926, Apr. 1995.
    • (1995) IEEE Microwave Theory Tech. , vol.43 , Issue.4 , pp. 922-926
    • Louhi, J.T.1    Räisänen, A.V.2
  • 6
    • 10444222723 scopus 로고
    • Self consistent physics-based numerical device and harmonic balance circuit analysis of heterostructure barrier and Schottky barrier varactors including thermal effects
    • Pasadena, CA, Mar. 23
    • J. R. Jones, S. H. Jones, and G. B. Tait, "Self consistent physics-based numerical device and harmonic balance circuit analysis of heterostructure barrier and Schottky barrier varactors including thermal effects," in Sixth Int. Symp. Space THz Tech., Pasadena, CA, Mar. 23, 1995.
    • (1995) Sixth Int. Symp. Space THz Tech.
    • Jones, J.R.1    Jones, S.H.2    Tait, G.B.3
  • 8
    • 36849106474 scopus 로고    scopus 로고
    • Avalanche breakdown voltages of abrupt and linearly graded p-n junctions in Ge, Si, GaAs and GaP
    • Mar.
    • S. M. Sze and G. Gibbons, "Avalanche breakdown voltages of abrupt and linearly graded p-n junctions in Ge, Si, GaAs and GaP," Appl. Phys. Lett., vol. 8, no. 5, pp. 111-113, Mar. 1996.
    • (1996) Appl. Phys. Lett. , vol.8 , Issue.5 , pp. 111-113
    • Sze, S.M.1    Gibbons, G.2
  • 9
    • 0021204463 scopus 로고
    • Effects of transient carrier transport in millimeter wave GaAs diodes
    • R. O. Grondin, P. A. Blakey, and J. R. East, "Effects of transient carrier transport in millimeter wave GaAs diodes," IEEE Trans. Electron Dev., vol. ED-13, pp. 21-28, 1984.
    • (1984) IEEE Trans. Electron Dev. , vol.ED-13 , pp. 21-28
    • Grondin, R.O.1    Blakey, P.A.2    East, J.R.3
  • 10


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.