Current Saturation in Submillimeter Wave Varactors

IEEE Transactions on Microwave Theory and Techniques

Volumn 40, Issue 5, 1992, Pages 831-838

  East, Jack R ^c  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^c UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC CIRCUITS, FREQUENCY MULTIPLYING - MILLIMETER WAVES; SEMICONDUCTOR DEVICES, SCHOTTKY BARRIER - MILLIMETER WAVES;

CURRENT SATURATION; MILLIMETER WAVE DEVICES; TERAHERTZ TECHNOLOGY;

VARACTORS;

EID: 0026866146     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.137387     Document Type: Article

References (11)

1. P. H. Siegel, A. R. Kerr, and W. Hwang, “Topics in the optimization of millimeter wave mixers,” NASA Tech. Paper 2287, Mar. 1984.
2. J. W. Archer, “Multipliers and parametric devices,- in Handbook of Microwave and Optical Components, vol. 2, Kai Chang, Ed. New York: Wiley, 1990.
3. E. Bava, G. P. Bava, A. Godone, and G. Rietto, “Analysis of Schottky-barrier millimetric varactor diodes,” IEEE Trans. Micro-wave Theory Tech., vol. MTT-29, pp. 1145–1149, 1981.
4. T. Crowe, “GaAs Schottky barrier mixer diodes for the frequency range 1–10 THz,” Int. J. Infrared and Millimeter Waves, vol. 10, no. 7, pp. 765–777, 1989.
5. N. Erickson, “High efficiency submillimeter frequency multipliers,” in 1990 IEEE MTT-S Int. Microwave Symp. Dig., vol. III, pp. 1301–1304.
6. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1981.
7. P. A. Blakey, B. Culshaw, and R. A. Giblin, “The flat field approximation A model for the drift region in high-efficiency GaAs IM-PATT‘s,” IEEE J. Solid State Electron Devices, vol. 1, pp. 57–61, Jan. 1977.
8. H. Statz, H. A. Haus, and R. A Pucci, “Large-signal dynamic loss in gallium arsenide Read avalanche diodes,” IEEE Trans. Electron Devices, vol. ED-25, pp. 22–23, Jan. 1978.
9. A. Raisanen and M. Sironen, “Capability of Schottky diode multipliers as local oscillators at 1 THz,” in Proc. First International Symposium on Space Terahertz Technology, Mar. 1990, pp. 293–303.
10. R. O. Grondin, P. A. Blakey, and J. R. East, “Effects of transient carrier transport in millimeter-wave GaAs diodes,” IEEE Trans. Electron Devices, vol. ED-31, pp. 21–28, 1984.
11. H. Gronqvist, E. Kollberg, and A. Rydberg, “Quantum well and quantum barrier diodes for generating sub-millimeter wave power,” Optical and Microwave Tech. Lett., Jan. 1991.