Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGan quantum dots

Semiconductors

Volumn 34, Issue 4, 2000, Pages 481-487

  Krestnikov, I L ^a   Sakharov, A V ^a   Lundin, W V ^a   Musikhin, Yu G ^a   Kartashova, A P ^a   Usikov, A S ^a   Tsatsul'nikov, A F ^a   Ledentsov, N N ^a   Alferov, Zh I ^a   Soshnikov, I P ^b   Hahn, E ^b   Neubauer, B ^b   Rosenauer, A ^b   Litvinov, D ^b   Gerthsen, D ^b   Plaut, A C ^c   Hoffmann, A A ^d   Bimberg, D ^d  

^a IOFFE INSTITUTE   (Russian Federation)

^b Lab Electronenmikroskopie U   (Germany)

^c UNIVERSITY OF EXETER   (United Kingdom)

^d TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034164688     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1188011     Document Type: Article

References (22)

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