Benefits of chemical beam epitaxy for micro and optoelectronic applications

Progress in Crystal Growth and Characterization of Materials

Volumn 33, Issue 4, 1996, Pages 473-495

  Benchimol, J L ^a,b   Alexandre, F ^a   Lamare, B ^a,c   Legay, P ^a,d  

^a ORANGE LABS   (France)

^b MCGILL UNIVERSITY   (Canada)

^c SORBONNE UNIVERSITÉ   (France)

^d Inst Sci l'Ingenieur Thermique E   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMINES; ETCHING; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATION; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SURFACE CLEANING; THICKNESS CONTROL;

DEVICE PLANARIZATION; LOW GROWTH TEMPERATURE; MASKED SUBSTRATES;

CHEMICAL BEAM EPITAXY;

EID: 0030414175     PISSN: 09608974     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0960-8974(96)00091-5     Document Type: Article

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