Minority carrier lifetime in MOCVD-grown C- and Zn-doped InGaAs

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1999, Pages 127-130

  Chelli, C ^a   Cui, D ^a   Hubbard, S M ^a   Eisenbach, A ^a   Pavlidis, D ^a   Krawczyk, S K ^a   Sermage, B ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CARRIER CONCENTRATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PASSIVATION; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH; ZINC;

MINORITY CARRIER LIFETIME;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0032684485     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (13)