Carrier lifetime in carbon doped In0.53Ga0.47As

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1996, Pages 572-575

  Sermage, B ^a   Benchimol, J L ^a   Michel, J C ^a   Alexandre, F ^a   Launay, P ^a   Caffin, D ^a  

^a France Telecom   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CHARGE CARRIERS; CHEMICAL BEAM EPITAXY; COMPOSITION EFFECTS; CRYSTAL LATTICES; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; LUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

AUGER RECOMBINATION; CARRIER LIFETIME; LATTICE MISMATCH; TIME RESOLVED LUMINESCENCE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029724396     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)