Behaviour of vicinal InP surfaces grown by MOVPE: Exploitation of AFM images

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 251-256

  Thevenot V ^a   Souliere, V ^a   Dumont, H ^a   Monteil, Y ^a   Bouix, J ^a   Regreny, P ^b   Duc, Tran Minh ^b  

^a UNIVERSITÉ LYON 1   (France)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; MORPHOLOGY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

PHOSPHINE; SURFACE MORPHOLOGY;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 0030645392     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00615-X     Document Type: Article

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4. V. Soulière, V. Thévenot, H. Dumont, Y. Monteil and J. Bouix, Proc. of IPRM96, to be published.
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