Growth of A1N and GaN thin films via OMVPE and gas source MBE and their characterization

Solid-State Electronics

Volumn 41, Issue 2 SPEC. ISS., 1997, Pages 129-134

  Davis, Robert F ^a   Weeks Jr , T W ^a   Bremser, M D ^a   Tanaka, S ^a   Kern, R S ^a   Sitar, Z ^a   Ailey, K S ^a   Perry, W G ^a   Wang, C ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; NITRIDES; NUCLEATION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES; THIN FILMS;

ALUMINUM NITRIDES (ALN); GALLIUM NITRIDES (GAN); GAS SOURCE MOLECULAR BEAM EPITAXY; HETEROEPITAXIAL NUCLEATION; INVERSION DOMAIN BOUNDARIES;

SEMICONDUCTING FILMS;

EID: 0031077718     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1101(96)00152-9     Document Type: Article

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