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Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 145-149

N incorporation in GaNxP1-x and InNxP1-x using a RF N plasma source

(2) Bi, W G a Tu, C W a

a UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; HIGH TEMPERATURE EFFECTS; PLASMA SOURCES; SATURATION (MATERIALS COMPOSITION); SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SOLUBILITY; VAPOR PRESSURE;

RADIO FREQUENCY PLASMA SOURCES;

NITRIDES;

EID: 0031147608 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00812-3 Document Type: Article

Times cited : (10)

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