Damage study of ITO under high electric field

Thin Solid Films

Volumn 363, Issue 1, 2000, Pages 240-243

  He, J ^a   Lu, M ^a   Zhou, X ^a   Cao, J R ^a   Wang, K L ^a   Liao, L S ^a   Deng, Z B ^a   Ding, X M ^a   Hou, X Y ^a   Lee, S T ^b  

^a FUDAN UNIVERSITY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DECOMPOSITION; ELECTRIC FIELD EFFECTS; ENERGY GAP; GLASS; INDIUM COMPOUNDS; SURFACE ROUGHNESS; THIN FILMS;

PHOTOETCHING; SURFACE ATOMIC CONCENTRATIONS;

OPTICAL FILMS;

EID: 0033903034     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)01066-4     Document Type: Article

References (11)

1. C.W. Tang, S.A. Van Slyke, Appl. Phys. Lett. 51 (1987) 913.
2. C. Adachi, K. Nagai, N. Tamoto, Appl. Phys. Lett. 20 (1995) 66.
3. J.C. Scott, J.H. Kaufman, P.J. Brock, R. DiPietro, J. Salem, J.A. Goitia, J. Appl. Phys. 79 (1996) 2745.
4. E.M. Man, L.M. Do, Y. Niidome, M. Fujihira, Chem. Lett. (1994) 969.
5. C.L. Chao, K.R. Chuang, S.A. Chen, Appl. Phys. Lett. 69 (1996) 2894.
6. S.T. Lee, X.Y. Hou, M.G. Mason, C.W. Tang, Appl. Phys. Lett. 72 (1998) 1593.
7. C.W. Tang, S.A. Van Slyke, C.H. Chen, J. Appl. Phys. Lett. 65 (1989) 3610.
8. A. Rajapogal, C.I. Wu, A. Kahn, J. Appl. Phys. 83 (1998) 2649.
9. X. Zhou, J. He, L.S. Liao, et al., Appl. Phys. Lett. 74 (1999) 609.
10. A.R. Schlatmann, D. Wilms Floet, A. Hiberer, et al., Appl. Phys. Lett. 69 (1996) 1764.
11. L.M. Do, K. Kim, T. Zyung, H.K. Shim, J.J. Kim, Appl. Phys. Lett. 70 (1997) 3470.