Impact of Ge profile shape on the operation of SiGe HBT precision voltage references

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 1997, Pages 100-103

  Salmon, Stacey L ^a   Cressler, John D ^a   Jaeger, Richard C ^a   Harame, David L ^a  

^a AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; COMPUTER SOFTWARE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS;

SOFTWARE PACKAGE SPICE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031333533     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)