SILICON-GERMANIUM BASE HETEROJUNCTION BIPOLAR TRANSISTORS BY MOLECULAR BEAM EPITAXY.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1987, Pages 874-875

  Iyer, S S ^a   Patton, G L ^a   Delage, S S ^a   Tiwari, S ^a   Stork, J M C ^a  

^a IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GERMANIUM - GROWTH; SEMICONDUCTING SILICON - GROWTH;

BANDGAP REDUCTION EFFECT; DRY ETCHING; GUMMEL PLOT; LOW-TEMPERATURE PROCESSING; SILICON-GERMANIUM BASE HBT;

TRANSISTORS, BIPOLAR;

EID: 0023573563     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iedm.1987.191578     Document Type: Conference Paper

References (0)